NPN bipolar transistor in a TO-92 wire-leaded package for control and signal-processing applications. It is rated for 160 V collector-emitter voltage, 600 mA DC collector current, and 0.625 W power dissipation. The device provides DC current gain of 80 at VCE = 5 V and IC = 10 mA, collector saturation voltage of 200 mV at IC = 50 mA and IB = 5 mA, and gain-bandwidth product of 100 MHz at IC = 10 mA and VCE = 10 V. It is qualified to Industrial Grade operation with a maximum junction temperature of 150 °C and is not listed as ESD sensitive.
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Diotec 2N5551 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-92 |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.95 |
| REACH | Compliant |
| Military Spec | False |
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