BC847C

This device is an NPN bipolar junction transistor for control and signal processing in SOT-23 surface-mount packaging. It is rated for 45 V collector-emitter voltage, 100 mA DC collector current, and 250 mW power dissipation. The transistor supports up to 150 °C junction temperature and is specified with the C gain group, including DC current gain of 420 to 800 at VCE = 5 V and IC = 2 mA. Diotec lists it as an industrial-grade, active part with a typical gain-bandwidth product of 300 MHz. The standard delivery form is taped and reeled.