PNP small-signal silicon epitaxial planar transistor in a SOT-23 surface-mount package. It is rated for 150 V collector-emitter voltage, 160 V collector-base voltage, 600 mA continuous collector current, and 250 mW power dissipation at 25°C. Junction and storage temperature range from -55°C to +150°C. Typical dynamic characteristics include transition frequency up to 300 MHz and collector-base capacitance up to 6 pF. Diotec specifies standard packaging taped and reeled, and the product page lists it as RoHS/REACH compliant.
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Diotec MMBT5401 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236 |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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