This device is a small-signal high-voltage NPN bipolar transistor in a compact SOT-23 surface-mount package. It is specified for up to 300 V collector-emitter voltage, 100 mA maximum collector current, and 250 mW total power dissipation. The transition frequency is listed as 50 MHz minimum and the minimum DC current gain is 40. The maximum junction temperature is 150 °C.
EDI Diodes (Electronic Devices Inc) MMBTA42 technical specifications.
| Transistor polarity | NPN |
| Collector-emitter voltage | 300V |
| Collector current | 100mA |
| Power dissipation | 250mW |
| Transition frequency | 50MHz |
| DC current gain | 40 min |
| Maximum junction temperature | 150°C |
| Package version | SOT23 |
| Package dimensions | 2.9 x 1.3 x 1mm |
| Configuration | 1 |
No datasheet is available for this part.
