This device is a small-signal NPN bipolar transistor in a SOT-23 surface-mount package. It is rated for 80 V collector-emitter voltage, 500 mA continuous collector current, and 300 mW power dissipation. The transistor is intended for low-power amplification and switching applications. Its operating and storage temperature range extends from -55 °C to +150 °C, and the datasheet family shows a minimum DC current gain of 100 and a typical gain-bandwidth product of 100 MHz.
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EDI Diodes (Electronic Devices Inc) MMBTA06 technical specifications.
| Transistor Type | NPN |
| Collector-Base Voltage | 80V |
| Collector-Emitter Voltage | 80V |
| Emitter-Base Voltage | 4.0V |
| Continuous Collector Current | 500mA |
| Power Dissipation | 300mW |
| Thermal Resistance Junction-to-Ambient | 417°C/W |
| Operating and Storage Temperature Range | -55 to +150°C |
| DC Current Gain | 100 min |
| Collector-Emitter Saturation Voltage | 0.25 maxV |
| Base-Emitter Saturation Voltage | 1.2 maxV |
| Gain-Bandwidth Product | 100 typMHz |
| Package | SOT-23 |
No datasheet is available for this part.
