The EPC2022 is a 100 V enhancement-mode gallium nitride (GaN) power transistor designed for high-frequency switching and high power density applications. It features a very low drain-source resistance (RDS(on)), zero reverse recovery (QRR) charges, and exceptionally low input and output capacitances. Gallium Nitride's high electron mobility allows for high switching performance in a compact footprint.
Temp Range-40 to 150°C
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Technical Specifications
Efficient Power Conversion EPC2022 technical specifications.
General
| Drain-to-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 90A |
| Drain-to-Source On Resistance (RDS(on)) | 3.2mΩ |
| Gate Threshold Voltage (VGS(TH)) | 0.8 - 2.5V |
| Pulsed Drain Current | 390A |
| Gate-to-Source Voltage (VGS) | 6V |
| Total Gate Charge (QG) | 16nC |
| Operating Temperature Range | -40 to 150°C |
| Die Size | 6.05 x 2.3mm |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Efficient Power Conversion EPC2022 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2022 to view detailed technical specifications.
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