The EPC2023 is a 30 V gallium nitride (GaN) enhancement mode power transistor. It offers high switching frequency with low losses and zero reverse recovery. The device is designed for high power density applications including DC-DC converters, motor drives, and synchronous rectification. It features a lateral device structure and majority carrier diode providing low gate charge and exceptionally low on-resistance in a small footprint.
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Technical Specifications
Efficient Power Conversion EPC2023 technical specifications.
General
| VDS (Drain-to-Source Voltage) | 30V |
| RDS(on) Typical | 1.45mΩ |
| ID Continuous | 90A |
| ID Pulsed | 590A |
| QG (Total Gate Charge) | 16nC |
| Die Size | 6.05 x 2.3mm |
| Operating Temperature TJ | -40 to 150°C |
Compliance
| RoHS | 6/6 Compliant |
| Halogen Free | Yes |
| REACH | Compliant |
Datasheet
Efficient Power Conversion EPC2023 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2023 to view detailed technical specifications.
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