The EPC2037 is a 100 V gallium nitride (GaN) enhancement mode power transistor. It features exceptionally high electron mobility and a low temperature coefficient, resulting in low RDS(on). Its lateral device structure and majority carrier diode provide low gate charge (QG) and zero reverse recovery charge (QRR), making it suitable for high-frequency switching and low on-state loss applications.
Temp Range-40 to 150°C
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Technical Specifications
Efficient Power Conversion EPC2037 technical specifications.
General
| Drain-to-Source Voltage (VDS) | 100V |
| Drain-Source On Resistance (RDS(on)) | 550mΩ |
| Continuous Drain Current (ID) | 1.7A |
| Pulsed Drain Current (ID) | 2.4A |
| Gate Threshold Voltage (VGS(TH)) | 0.8 - 2.5V |
| Die Capacity (Typical Output) | 15pF |
| Operating Temperature Range | -40 to 150°C |
| Die size | 0.9 x 0.9mm x mm |
Compliance
| RoHS | 6/6 Compliant |
| Halogen Free | Yes |
Datasheet
Efficient Power Conversion EPC2037 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2037 to view detailed technical specifications.
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