The EPC2059 is an enhancement mode gallium nitride (GaN) power transistor capable of 170 V operation with a maximum RDS(on) of 9 mΩ. It features a lateral device structure and majority carrier diode providing zero reverse recovery (QRR) and low gate charge (QG). It is supplied in a passivated die form with solder bars.
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Technical Specifications
Efficient Power Conversion EPC2059 technical specifications.
General
| Drain-to-Source Voltage (VDS) | 170V |
| Max RDS(on) @ 5V VGS | 9mΩ |
| Continuous Drain Current (ID) | 24A |
| Pulsed Drain Current | 53A |
| Gate-to-Source Voltage (VGS) | -4 to 6V |
| Typical Gate Charge (QG) | 5.7nC |
| Typical Gate-to-Drain Charge (QGD) | 0.8nC |
| Die Size | 2.8 x 1.4mm |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| ECCN | EAR99 |
Datasheet
Efficient Power Conversion EPC2059 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2059 to view detailed technical specifications.
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