The EPC2204 is a 100 V enhancement-mode gallium nitride (GaN) power transistor. It features a lateral structure that provides exceptionally low gate charge (Qg) and zero reverse recovery charge (Qrr) due to its majority carrier diode integration. The device offers high electron mobility and a low-temperature coefficient, making it suitable for high-frequency switching and applications where on-state losses dominate. It is supplied in passivated die form with solder bars for enhanced thermal management.
Temp Range-40 to +150°C
Quick Jump:
Technical Specifications
Efficient Power Conversion EPC2204 technical specifications.
General
| Drain-to-Source Voltage (VDS) | 100V |
| Drain-Source On Resistance (RDS(on)) Max | 6mΩ |
| Continuous Drain Current (ID) | 29A |
| Pulsed Drain Current | 167A |
| Gate Threshold Voltage (VGS(th)) Typ | 1.1V |
| Total Gate Charge (Qg) Typ | 5.7nC |
| Operating Temperature Range | -40 to +150°C |
| Die Dimensions | 2.5 x 1.5mm |
Compliance
| RoHS | RoHS 3 Compliant |
| Halogen-free | Yes |
Datasheet
Efficient Power Conversion EPC2204 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2204 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.