EPC2207 is an eGaN® FET (Gallium Nitride) designed for high switching frequency and low on-time applications. It features exceptionally high electron mobility, zero reverse recovery charge (QRR), and ultra-low gate charge (QG). The device is supplied in passivated die form with solder bars for high thermal efficiency and a small footprint.
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| Drain-to-Source Voltage (VDS) | 200V |
| Drain-Source On Resistance (RDS(on)) | 22mΩ |
| Continuous Drain Current (ID) | 14A |
| Pulsed Drain Current (ID) | 54A |
| Gate-to-Source Voltage (VGS) | -4 to 6V |
| Operating Temperature Range (TJ) | -40 to 150°C |
| Die Size | 2.1 x 0.9mm |
| Thermal Resistance (RθJC) | 1.4°C/W |
| RoHS | Yes |
| Halogen-free | Yes |
Download the complete datasheet for Efficient Power Conversion EPC2207 to view detailed technical specifications.
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