The EPC2215 is a 200V gallium nitride (GaN) enhancement-mode power transistor designed for high-frequency power conversion. It offers approximately half the size of previous generation 200V eGaN devices while doubling performance benchmarks. These transistors feature very low gate charge, zero reverse recovery charge (QRR), and low on-state resistance (RDS(on)), making them suitable for Class-D audio, solar MPPTs, and high-density DC-DC converters.
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| Drain-to-Source Voltage (VDS) | 200V |
| Drain-Source On Resistance (RDS(on)) | 8mΩ |
| Continuous Drain Current (ID) | 32A |
| Pulsed Drain Current (ID pulsed) | 162A |
| Gate Threshold Voltage (VGS(th)) | 0.8 to 2.5V |
| Total Gate Charge (QG) | 13.6 to 17.7nC |
| Output Capacitance (COSS) | 390 to 585pF |
| Operating Temperature Range | -40 to +150°C |
| RoHS | Compliant |
| ECCN | EAR99 |
| Halogen-free | Yes |
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