The 1N5399G is a silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a JEDEC package code of DO-41 and a terminal position of axial. The diode is a single element, silicon-based rectifier diode with a maximum reverse voltage of 1000 volts. It is available in a DO-41 package type.
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Technical Specifications
EIC Semiconductor 1N5399G technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-41 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor 1N5399G Datasheet
Download the complete datasheet for EIC Semiconductor 1N5399G to view detailed technical specifications.
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