General purpose rectifier diode featuring a 200V repetitive peak reverse voltage and a minimum breakdown voltage of 220V. This axial-leaded, two-terminal silicon diode operates across a wide temperature range from -65°C to 175°C. It is a single-element rectifier diode designed for general-purpose rectification applications.
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Technical Specifications
EIC Semiconductor 1N5417 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Breakdown Voltage-Min | 220 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor 1N5417 Datasheet
Download the complete datasheet for EIC Semiconductor 1N5417 to view detailed technical specifications.
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