The 30KP33A is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 33V and a maximum non-repetitive peak reverse power dissipation of 30kW. It has a maximum clamping voltage of 58.6V and a nominal breakdown voltage of 38.65V. The diode is available in an axial package and has a maximum power dissipation of 7W. It can operate over a temperature range of -55°C to 175°C.
PolarityUNIDIRECTIONAL
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Technical Specifications
EIC Semiconductor 30KP33A technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 33 |
| Breakdown Voltage-Min | 36.7 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 58.6 |
| Breakdown Voltage-Nom | 38.65 |
| Breakdown Voltage-Max | 40.6 |
| Power Dissipation-Max | 7 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor 30KP33A Datasheet
Download the complete datasheet for EIC Semiconductor 30KP33A to view detailed technical specifications.
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