BAW56 is a high-speed double silicon switching diode in a small SOT-23 plastic surface-mount package. It is rated for 85 V repetitive peak reverse voltage, 75 V continuous reverse voltage, and 125 mA continuous forward current under the stated test conditions. The device features a 4 ns reverse recovery time and 2 pF diode capacitance at 0 V and 1 MHz. Forward voltage is specified up to 1.25 V at 150 mA, and the junction temperature range extends to 150 °C with storage from -65 °C to 150 °C. The device is specified as Pb-free and RoHS free.
Sign in to ask questions about the EIC Semiconductor BAW56 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
EIC Semiconductor BAW56 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 85 |
| Power Dissipation-Max | 0.25 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for EIC Semiconductor BAW56 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
