EIC Semiconductor
BZW50-100B
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Bidirectional, 1 Element, Silicon,
PolarityBIDIRECTIONAL
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Technical Specifications
EIC Semiconductor BZW50-100B technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 111 |
| Non-rep Peak Rev Power Dis-Max | 5000 |
| Clamping Voltage-Max | 179 |
| Breakdown Voltage-Nom | 124 |
| Breakdown Voltage-Max | 136 |
| Power Dissipation-Max | 6.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor BZW50-100B Datasheet
Download the complete datasheet for EIC Semiconductor BZW50-100B to view detailed technical specifications.
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