The BZW50-100B is a silicon transient voltage suppressor diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a bidirectional polarity and is available in a 2-terminal axial package. The diode element material is silicon and the diode type is a transient voltage suppressor diode. The maximum reverse voltage is 100V and the minimum breakdown voltage is 111V. The maximum non-repetitive peak reverse power dissipation is 5000W and the maximum clamping voltage is 179V.
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EIC Semiconductor BZW50-100B technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 111 |
| Non-rep Peak Rev Power Dis-Max | 5000 |
| Clamping Voltage-Max | 179 |
| Breakdown Voltage-Nom | 124 |
| Breakdown Voltage-Max | 136 |
| Power Dissipation-Max | 6.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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