This bidirectional silicon DIAC is designed for trigger applications with a typical breakover voltage of 32 V for the DB3 variant. It is supplied in a DO-35 glass package, also referenced as DO-204AH, and is specified for low breakover current with a maximum breakover current of 200 µA. The device provides breakover voltage symmetry of 3.8 V maximum and a dynamic breakback voltage of 5.0 V maximum. It supports peak current up to ±2 A under the stated 10 µs pulse test condition and has a peak output voltage of ±3 V. The operating junction temperature range is -40 °C to +100 °C, and the storage temperature range is -40 °C to +150 °C.
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EIC Semiconductor DB3 technical specifications.
| Minimum Breakover Voltage | 28V |
| Typical Breakover Voltage | 32V |
| Maximum Breakover Voltage | 36V |
| Maximum Breakover Current | 200µA |
| Maximum Breakover Voltage Symmetry | 3.8V |
| Maximum Dynamic Breakback Voltage | 5.0V |
| Maximum Peak Current | ±2A |
| Maximum Peak Output Voltage | ±3V |
| Thermal Impedance Junction to Ambient | 60°C/W |
| Operating Junction Temperature Range | -40 to +100°C |
| Storage Temperature Range | -40 to +150°C |
| Package | DO-35 Glass (DO-204AH) |
| Weight | 0.11g |
| RoHS | Pb / RoHS Free |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
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