The GBJ2506 is a 4-element silicon bridge rectifier diode from EIC Semiconductor. It features a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. The diode element material is silicon and the diode type is a bridge rectifier diode. The device has a 4-pin package type and a terminal position of single. It can withstand a reverse voltage of up to 600 volts.
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EIC Semiconductor GBJ2506 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
| Breakdown Voltage-Min | 600 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for EIC Semiconductor GBJ2506 to view detailed technical specifications.
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