The GBJ2510 is a 4-element silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It has a maximum reverse voltage of 1000 volts and is available in a 4-pin R-PSFM-T4 package. The diode is made of silicon and has a single terminal position. It is suitable for use in a variety of applications requiring a bridge rectifier diode with high voltage and temperature ratings.
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Technical Specifications
EIC Semiconductor GBJ2510 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| Breakdown Voltage-Min | 1000 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor GBJ2510 Datasheet
Download the complete datasheet for EIC Semiconductor GBJ2510 to view detailed technical specifications.
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