The GBPC2506 is a silicon bridge rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a 4-element design with upper terminal positioning and a maximum reverse voltage of 600V. The diode is constructed from silicon and is available in the S-PUFM-D4 package type.
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EIC Semiconductor GBPC2506 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | UPPER |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
| Breakdown Voltage-Min | 600 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
