The GBPC2510 is a 4-element bridge rectifier diode from EIC Semiconductor, featuring a SILICON diode element material and a breakdown voltage of at least 1000V. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The diode is packaged in an S-PUFM-D4 package type, suitable for surface mount applications.
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EIC Semiconductor GBPC2510 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | UPPER |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| Breakdown Voltage-Min | 1000 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for EIC Semiconductor GBPC2510 to view detailed technical specifications.
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