The GBPC602 is a silicon bridge rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has 4 diode elements and a terminal position of upper. The diode type is a bridge rectifier diode with a maximum reverse voltage of 200V. The GBPC602 is packaged in an S-PUFM-W4 package type.
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Technical Specifications
EIC Semiconductor GBPC602 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | UPPER |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Breakdown Voltage-Min | 200 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor GBPC602 Datasheet
Download the complete datasheet for EIC Semiconductor GBPC602 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.