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Technical Specifications
EIC Semiconductor GBU810 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
4
Min Operating Temperature
-55
Terminal Position
SINGLE
Number of Elements
4
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
1000
Breakdown Voltage-Min
1000
Compliance
RoHS
Yes
Lead Free
Yes
REACH
Compliant
Military Spec
False
Datasheet
EIC Semiconductor GBU810 Datasheet
Download the complete datasheet for EIC Semiconductor GBU810 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.