The KBPC3506W is a 4-element bridge rectifier diode from EIC Semiconductor, featuring a SILICON diode element material and a maximum operating temperature of 150 degrees Celsius. It has a minimum operating temperature of -40 degrees Celsius and a maximum reverse voltage of 600 volts. The diode is packaged in an S-PUFM-W4 package with 4 terminals in an upper terminal position.
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Technical Specifications
EIC Semiconductor KBPC3506W technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | UPPER |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
| Breakdown Voltage-Min | 600 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor KBPC3506W Datasheet
Download the complete datasheet for EIC Semiconductor KBPC3506W to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.