The RBV5008 is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It has a single terminal position and is available in a 4-pin package. The diode element is made of silicon and has a minimum breakdown voltage of 800 volts. The device is suitable for use in a variety of applications where a high-voltage rectifier is required.
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Technical Specifications
EIC Semiconductor RBV5008 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Breakdown Voltage-Min | 800 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor RBV5008 Datasheet
Download the complete datasheet for EIC Semiconductor RBV5008 to view detailed technical specifications.
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