The RBV602 is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It has 4 terminals and is a single terminal device. The diode element is made of silicon and the diode type is a bridge rectifier diode. The maximum reverse voltage is 200 volts and the minimum breakdown voltage is also 200 volts.
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Technical Specifications
EIC Semiconductor RBV602 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 200 |
| Breakdown Voltage-Min | 200 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor RBV602 Datasheet
Download the complete datasheet for EIC Semiconductor RBV602 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.