This silicon zener diode features a maximum operating temperature of 175°C and a maximum power dissipation of 0.4W. It has a unidirectional polarity and is packaged in a DO-34 axial package. The diode element is made of silicon and is a single zener diode element. It is suitable for use in a variety of applications where a reliable and efficient zener diode is required.
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EIC Semiconductor RD33ESAB3 technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-34 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.4 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
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