The EIC Semiconductor SM8S11 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 11V and a maximum power dissipation of 8W. It features a TO-263AB package and operates over a temperature range of -55°C to 175°C. The diode is constructed with silicon material and is suitable for use in applications requiring transient voltage suppression.
PolarityUNIDIRECTIONAL
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Technical Specifications
EIC Semiconductor SM8S11 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 11 |
| Breakdown Voltage-Min | 12.2 |
| Non-rep Peak Rev Power Dis-Max | 6600 |
| Breakdown Voltage-Max | 14.9 |
| Power Dissipation-Max | 8 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor SM8S11 Datasheet
Download the complete datasheet for EIC Semiconductor SM8S11 to view detailed technical specifications.
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