EIC Semiconductor
SM8S30A
Trans Voltage Suppressor Diode, 6600W, 30V V(RWM), Unidirectional, 2 Element, Silicon, TO-263AB, TO-263, D2PAK-3/2
PolarityUNIDIRECTIONAL
Quick Jump:
Technical Specifications
EIC Semiconductor SM8S30A technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 33.3 |
| Non-rep Peak Rev Power Dis-Max | 6600 |
| Breakdown Voltage-Max | 36.8 |
| Power Dissipation-Max | 8 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor SM8S30A Datasheet
Download the complete datasheet for EIC Semiconductor SM8S30A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.