Unidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, featuring a 28V repetitive peak reverse voltage. This silicon diode offers a minimum breakdown voltage of 31.1V and a nominal breakdown voltage of 33.45V, with a maximum breakdown voltage of 34.4V. Designed with one silicon element and two terminals, it operates within a temperature range of -55°C to 150°C and is housed in a DO-214AA (SMB) package.
PolarityUNIDIRECTIONAL
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Technical Specifications
EIC Semiconductor SMBJ28A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 28 |
| Breakdown Voltage-Min | 31.1 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Nom | 33.45 |
| Breakdown Voltage-Max | 34.4 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
EIC Semiconductor SMBJ28A Datasheet
Download the complete datasheet for EIC Semiconductor SMBJ28A to view detailed technical specifications.
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