Unidirectional transient voltage suppressor diode, 600W peak reverse power dissipation, featuring a 28V repetitive peak reverse voltage. This silicon diode offers a minimum breakdown voltage of 31.1V and a nominal breakdown voltage of 33.45V, with a maximum breakdown voltage of 34.4V. Designed with one silicon element and two terminals, it operates within a temperature range of -55°C to 150°C and is housed in a DO-214AA (SMB) package.
PolarityUNIDIRECTIONAL
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Technical Specifications
EIC Semiconductor SMBJ28A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
28
Breakdown Voltage-Min
31.1
Non-rep Peak Rev Power Dis-Max
600
Breakdown Voltage-Nom
33.45
Breakdown Voltage-Max
34.4
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
not_compliant
Military Spec
False
Datasheet
EIC Semiconductor SMBJ28A Datasheet
Download the complete datasheet for EIC Semiconductor SMBJ28A to view detailed technical specifications.
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