This industrial synchronous DRAM IC features a 54-pin TSOP2 package and operates over a temperature range of -40°C to 85°C. It has a nominal supply voltage of 3.3V and a maximum supply voltage of 3.6V. The device has a maximum access time of 5.4ns and a memory capacity of 8388608 words, with 8000000 words of code memory.
Elite Semiconductor M12L128168A-6TIG2N technical specifications.
| Max Operating Temperature | 85 |
| Number of Terminals | 54 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G54 |
| Width | 10.16 |
| Length | 22.22 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Voltage-Max (Vsup) | 3.6 |
| Supply Voltage-Min (Vsup) | 3 |
| Number of Words | 8388608 |
| Number of Words Code | 8000000 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Number of Ports | 1 |
| Access Time-Max | 5.4 |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Elite Semiconductor M12L128168A-6TIG2N to view detailed technical specifications.
No datasheet is available for this part.