RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, METAL, TO-39, 3 PIN
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 20V; IC (A): 0.03A; HFE Min: 70; HFE Max: 220; VCE (V): 10V; IC (mA): 1mA; FT Min (MHz): 150 MHz; PTM Max (W): 0.15W; Package: SOT-323; package_code: SOT-323; mfr_package_code: SOT-323