The FMH23N50E is a MOSFET N-Channel device with a drain to source breakdown voltage of 500V and a drain to source resistance of 245mR. It has a gate to source voltage of 30V and a maximum operating temperature of 150°C. The device is mounted through a hole and has a power dissipation of 315W. It is not RoHS compliant. The FMH23N50E has a turn-off delay time of 150ns and a turn-on delay time of 24ns.
MountingThrough Hole
PolarityN
Power315W
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Technical Specifications
Fuji Electric FMH23N50E technical specifications.
General
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 245mR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 0.768inch |
| Length | 0.61inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Polarization | N |
| Power Dissipation | 315W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 24ns |
| Width | 0.177inch |
Compliance
| RoHS | Not Compliant |
Datasheet
Fuji Electric FMH23N50E Datasheet
Download the complete datasheet for Fuji Electric FMH23N50E to view detailed technical specifications.
No datasheet is available for this part.
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