Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M116, 5 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M128, 4 PIN
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN
FUJI ELECTRIC 1MBI3600U4D-170 IGBT Array & Module Transistor, N Channel, 4.8 kA, 2.57 V, 18.65 kW, 1.7 kV, Module
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, M138, 4 PIN
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M128, 4 PIN
Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, M129, 4 PIN
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel, MODULE-4