Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M215, 7 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

FUJI ELECTRIC 2MBI150U4A-120-50 IGBT Array & Module Transistor, N Channel, 200 A, 2.3 V, 735 W, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M233, 7 PIN
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, M219, 7 PIN