Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel,
Insulated Gate Bipolar Transistor, 800A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
FUJI ELECTRIC 2MBI100S-120-50 IGBT Array & Module Transistor, Dual Pack, N Channel, 150 A, 2.6 V, 780 W, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M232, 7 PIN
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M218, 7 PIN
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M218, MODULE-7
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

FUJI ELECTRIC 2MBI150U4A-120-50 IGBT Array & Module Transistor, N Channel, 200 A, 2.3 V, 735 W, 1.2 kV, Module
FUJI ELECTRIC 2MBI100U4A-120-50 IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module