Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
Silicon Controlled Rectifier, 25.12A I(T)RMS, 25V V(DRM), 1 Element, TO-48, TO-48, 2 PIN
Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-208AA, TO-48, 2 PIN
Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-208AA
Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-48, TO-48, 2 PIN
Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-48, TO-48, 2 PIN
Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 25V V(DRM), 25V V(RRM), 1 Element, TO-208AA, TO-48, 2 PIN