Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
Infineon 2N6802 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-205AF |
| Number of Elements | 1 |
| RoHS | No |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
