Power Field-Effect Transistor, 35A I(D), 450V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PL, 3 PIN
Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.15W; V(BR)DSS Min (V): 30V; ID Max (A): 0.1A; RDS(ON) Max (Ω): 8 Ohm; ID (A): 0.01A; VGS (V): 4V; ID (mA): 100mA; GFS Min (S): 0.02 S; VDS (V): 3V; ID (A) 1: 0.01A; Package: SOT-523