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aMOS 600V 11A 28W Through Hole MOSFET

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 545pF

Transistor

,

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 1.99nF

Transistor

IN-LINE, R-PSIP-T3

Not Recommended

Package/Case: TO-262-3

Continuous Drain Current (ID): 15A

Drain to Source Voltage (Vdss): 600V

Gate to Source Voltage (Vgs): 30V

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Not Recommended

Package/Case: TO-262

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 545pF

650V 11A aMOS TO-262-3 Through Hole Power Transistor

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 650V

Input Capacitance: 646pF