Trans IGBT Chip N-CH 1.2KV 215A 4-Pin SOT-227
Trans IGBT Module N-CH 1200V 215A 625000mW 4-Pin SOT-227 Tube
Insulated Gate Bipolar Transistor, 215A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, ISOTOP-4
Insulated Gate Bipolar Transistor, 215A I(C), 1200V V(BR)CES, N-Channel