Search Results for &quot; BLF6G22LS-100,118 &quot;

N-CHANNEL MOSFET, 65V, 29A, 2.17GHz, Surface Mount

End of Life

Continuous Drain Current (ID): 29A

Current Rating: 29A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 160mR

BLF6G22LS-100,112

N-Channel MOSFET 65V 29A 160mR Surface Mount

Not Recommended for New Design

Continuous Drain Current (ID): 29A

Current Rating: 29A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 160mR

Trans MOSFET N-CH 65V 34A 3-Pin LDMOST T/R

End of Life

Continuous Drain Current (ID): 34A

Current Rating: 34A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 135mR

Ampleon

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

Obsolete

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

Search Results for "BLF6G22LS-100,118"

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BLF6G22LS-100,118

N-CHANNEL MOSFET, 65V, 29A, 2.17GHz, Surface Mount

End of Life

Continuous Drain Current (ID): 29A

Current Rating: 29A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 160mR

BLF6G22LS-100,112

N-Channel MOSFET 65V 29A 160mR Surface Mount

Not Recommended for New Design

Continuous Drain Current (ID): 29A

Current Rating: 29A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 160mR

Trans MOSFET N-CH 65V 34A 3-Pin LDMOST T/R

End of Life

Continuous Drain Current (ID): 34A

Current Rating: 34A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 135mR

Ampleon

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2