Search Results for &quot; BLF7G27LS-140,118 &quot;

N-CHANNEL MOSFET 65V 28A 2.7GHz Surface Mount

Volume Production

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.7GHz

Trans RF MOSFET N-CH 65V 28A 3-Pin SOT-502B T/R

Volume Production

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.7GHz

BLF7G27LS-140,112

N-CHANNEL MOSFET 65V 28A 2.7GHz Surface Mount

Volume Production

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.7GHz

Ampleon

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

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Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

Search Results for "BLF7G27LS-140,118"

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BLF7G27LS-140,118

N-CHANNEL MOSFET 65V 28A 2.7GHz Surface Mount

Volume Production

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.7GHz

Trans RF MOSFET N-CH 65V 28A 3-Pin SOT-502B T/R

Volume Production

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.7GHz

BLF7G27LS-140,112

N-CHANNEL MOSFET 65V 28A 2.7GHz Surface Mount

Volume Production

Continuous Drain Current (ID): 28A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.7GHz

Ampleon

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2