65V 3.4A N-Channel MOSFET, 1.88GHz, 95W, 100-Piece Tape and Reel
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-8
BLF8G20LS-400PGV
BLF8G20LS-400PV
RF Power Field-Effect Transistor,