Search Results for &quot; BLF9G38LS-90PJ &quot;

N-CHANNEL MOSFET 65V 16.5A 3.6GHz 9W Surface Mount

Volume Production

Continuous Drain Current (ID): 16.5A

Current Rating: 16.5A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

BLF6G38LS-50,112

Trans RF MOSFET N-CH 65V 16.5A 3-Pin SOT-502B Blister

Volume Production

Continuous Drain Current (ID): 16.5A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 290mR

Drain to Source Voltage (Vdss): 65V

BLF6G38LS-100,112

RF MOSFET Transistors LDMOS TNS

Not Recommended for New Design

Continuous Drain Current (ID): 34A

Current Rating: 34A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 180mR

N-Channel Power MOSFET 65V 16.5A 290mR 13V

Obsolete

Continuous Drain Current (ID): 16.5A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 290mR

Drain to Source Voltage (Vdss): 65V

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

FLATPACK, R-CQFP-X6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: QUAD

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

FLATPACK, R-CQFP-X6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: QUAD

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

Obsolete

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

Trans MOSFET N-CH 65V 7-Pin SOT-1239B Bulk

Not Recommended for New Design

Package/Case: SOT

Gate to Source Voltage (Vgs): 13V

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

Trans MOSFET N-CH 65V 7-Pin SOT-1239B T/R

Not Recommended for New Design

Package/Case: SOT

Gate to Source Voltage (Vgs): 13V

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

BLF6G38LS-100

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

Obsolete

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

Obsolete

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

BLF8G38LS-75V

RF Power Field-Effect Transistor,

Contact Manufacturer

Search Results for "BLF9G38LS-90PJ"

Filters

N-CHANNEL MOSFET 65V 16.5A 3.6GHz 9W Surface Mount

Volume Production

Continuous Drain Current (ID): 16.5A

Current Rating: 16.5A

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

BLF6G38LS-50,112

Trans RF MOSFET N-CH 65V 16.5A 3-Pin SOT-502B Blister

Volume Production

Continuous Drain Current (ID): 16.5A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 290mR

Drain to Source Voltage (Vdss): 65V

BLF6G38LS-100,112

RF MOSFET Transistors LDMOS TNS

Not Recommended for New Design

Continuous Drain Current (ID): 34A

Current Rating: 34A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 180mR

N-Channel Power MOSFET 65V 16.5A 290mR 13V

Obsolete

Continuous Drain Current (ID): 16.5A

Drain to Source Breakdown Voltage: 65V

Drain to Source Resistance: 290mR

Drain to Source Voltage (Vdss): 65V

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

FLATPACK, R-CQFP-X6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: QUAD

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

FLATPACK, R-CQFP-X6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: QUAD

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

Obsolete

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

Trans MOSFET N-CH 65V 7-Pin SOT-1239B Bulk

Not Recommended for New Design

Package/Case: SOT

Gate to Source Voltage (Vgs): 13V

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

Trans MOSFET N-CH 65V 7-Pin SOT-1239B T/R

Not Recommended for New Design

Package/Case: SOT

Gate to Source Voltage (Vgs): 13V

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

BLF6G38LS-100

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

Obsolete

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

FLATPACK, R-CDFP-F2

Obsolete

Number of Terminals: 2

Terminal Position: DUAL

Number of Elements: 1

BLF8G38LS-75V

RF Power Field-Effect Transistor,