Search Results for "BSG0810NDIATMA1"

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Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN

SMALL OUTLINE, R-PDSO-N7

Active

Number of Terminals: 7

Min Operating Temperature: -55

Terminal Position: DUAL

Number of Elements: 2

Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN

SMALL OUTLINE, R-PDSO-N7

Active

Number of Terminals: 7

Min Operating Temperature: -55

Terminal Position: DUAL

Number of Elements: 2

Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN

SMALL OUTLINE, R-PDSO-N7

Active

Number of Terminals: 7

Min Operating Temperature: -55

Terminal Position: DUAL

Number of Elements: 2

Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN

SMALL OUTLINE, R-PDSO-N7

Active

Number of Terminals: 7

Min Operating Temperature: -55

Terminal Position: DUAL

Number of Elements: 2