Search Results for &quot; CM450DY-24S &quot;

IGBT MOD 1200V 410A 3330W

Volume Production

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.7V

Collector Emitter Voltage (VCEO): 1.2kV

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

MODULE-11

Transferred

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Mitsubishi

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-11

FLANGE MOUNT, R-XUFM-X7

Active

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Pin Count: 11

Search Results for "CM450DY-24S"

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CM450DY-24S

IGBT MOD 1200V 410A 3330W

Volume Production

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.7V

Collector Emitter Voltage (VCEO): 1.2kV

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

MODULE-11

Transferred

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Saturation Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Mitsubishi

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-11