Search Results for "CP30TD1-12A"

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Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-26

IN-LINE, R-XDIP-T26

Obsolete

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 2.2V

Input: Three Phase Bridge Rectifier

Input Capacitance: 2.36nF

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-26

IN-LINE, R-XDIP-T26

Obsolete

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 2.5V

Input: Three Phase Bridge Rectifier

Input Capacitance: 1.57nF

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-26

IN-LINE, R-XDIP-T26

Obsolete

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 2.2V

Input: Three Phase Bridge Rectifier

Input Capacitance: 2.36nF

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-26

IN-LINE, R-XDIP-T26

Obsolete

Collector Emitter Breakdown Voltage: 600V

Collector-emitter Voltage-Max: 2.5V

Input: Three Phase Bridge Rectifier

Input Capacitance: 1.57nF