
-20V, P ch NexFET MOSFET™, dual Common Source WLP 1.0x1.5, 108mOhm 6-DSBGA -55 to 150
-20V, P ch NexFET MOSFET™, dual Common Source WLP 1.0x1.5, 108mOhm 6-DSBGA -55 to 150

-20V, P ch NexFET MOSFET™, dual Common Source WLP 1.5x1.5, 27mOhm 9-DSBGA -55 to 150
Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, D2PAK-3
Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, D2PAK-3
Power Bipolar Transistor, 2A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Silicon Controlled Rectifier, 12A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, D2PAK-3
Silicon Controlled Rectifier, 25A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, D2PAK-3
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, PLASTIC PACKAGE-3
Power Bipolar Transistor, 6A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Silicon Controlled Rectifier, 25A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, D2PAK-3